首页 >IDT71V3556SA100BGG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
IDT71V3556SA100BGG
- 功能描述：
IC SRAM 4MBIT 100MHZ 119BGA
- RoHS：
是
- 类别：
集成电路(IC) >> 存储器
- 系列：
-
- 标准包装：
2,000
- 系列：
MoBL® 格式 -
- 存储器：
RAM
- 存储器类型：
SRAM - 异步
- 存储容量：
16M（2M x 8，1M x 16）
- 速度：
45ns
- 接口：
并联
- 电源电压：
2.2 V ~ 3.6 V
- 工作温度：
-40°C ~ 85°C
- 封装/外壳：
48-VFBGA
- 供应商设备封装：
48-VFBGA（6x8）
- 包装：
带卷(TR)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
119-PBGA(14x22) |
9550 |
专业分销产品!原装正品!价格优势! |
询价 | ||
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
询价 | ||
IDT |
21+ |
119PBGA (14x22) |
13880 |
公司只售原装,支持实单 |
询价 | ||
IDT |
23+ |
119PBGA (14x22) |
9000 |
原装正品，支持实单 |
询价 | ||
IDT |
23+ |
119-BGA |
4992 |
原装现货 |
询价 |
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