LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for low-power memo

文件：62.33 Kbytes 页数：8 Pages

IDT

LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT)

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LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for low-power memo

文件：62.33 Kbytes 页数：8 Pages

IDT

LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for low-power memo

文件：62.33 Kbytes 页数：8 Pages

IDT

LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for low-power memo

文件：62.33 Kbytes 页数：8 Pages

IDT

LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT)

DESCRIPTION: The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using IDT’s high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for low-power memo

文件：62.33 Kbytes 页数：8 Pages

IDT