CMOS STATIC RAM 64K (8K x 8-BIT)

Description The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS

文件：104.93 Kbytes 页数：9 Pages

IDT

CMOS STATIC RAM 64K (8K x 8-BIT)

Description The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS

文件：104.93 Kbytes 页数：9 Pages

IDT

CMOS STATIC RAM 64K (8K x 8-BIT)

Description The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS

文件：104.93 Kbytes 页数：9 Pages

IDT

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件：213.71 Kbytes 页数：12 Pages

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CMOS Static RAM 64K

文件：749.13 Kbytes 页数：10 Pages

IDT

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p

文件：213.71 Kbytes 页数：12 Pages

RENESAS

瑞萨