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70V659S12BC

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V659S12BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12BCG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12BCGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12BCGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V659S12BCI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V659S12BF

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V659S12BFG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12BFG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12BFGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12BFGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V659S12BFI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70V659S12DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12DRG

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12DRGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

70V659S12DRGI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT70V659S12BC

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT70V659S12BC

HIGH-SPEED3.3V128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT70V659S12BCI

HIGH-SPEED3.3V128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT70V659S12BCI

HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    IDT70V659S12BCGI

  • 制造商:

    Integrated Device Technology Inc

  • 功能描述:

    IC SRAM 4.5MBIT 12NS 256CABGA

供应商型号品牌批号封装库存备注价格
IDT
12+
NA
100
终端备货原装现货-军工器件供应商
询价
IDT
22+
BGA256
9852
只做原装正品现货!或订货假一赔十!
询价
IDT
22+
256CABGA
9000
原厂渠道,现货配单
询价
IDT
21+
256CABGA
13880
公司只售原装,支持实单
询价
IDT
23+
256CABGA
9000
原装正品,支持实单
询价
IDT
2022+
BGA256
57550
询价
IDT
1430+
BGA
9000
绝对原装进口现货可开增值税发票
询价
IDT
23+
256-CABGA(17x17)
36430
专业分销产品!原装正品!价格优势!
询价
IDT
13+
BGA256
330
只有原装!只做原装!一片起卖!
询价
IDT
23+
BGA
1006
优势库存
询价
更多IDT70V659S12BCGI供应商 更新时间2024-4-29 13:52:00