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IDT70T659S8BC中文资料PDF规格书

IDT70T659S8BC
厂商型号

IDT70T659S8BC

功能描述

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

文件大小

344.83 Kbytes

页面数量

27

生产厂商 Integrated Device Technology, Inc.
企业简称

IDT集成器

中文名称

深圳市集成器件技术有限公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-2 16:15:00

IDT70T659S8BC规格书详情

Description

The IDT70T651/9 is a high-speed 256/128K x 36 Asynchronous Dual-Port Static RAM. The IDT70T651/9 is designed to be used as a stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location

◆ High-speed access

– Commercial: 8/10/12/15ns (max.)

– Industrial: 10/12ns (max.)

◆ RapidWrite Mode simplifies high-speed consecutive write cycles

◆ Dual chip enables allow for depth expansion without external logic

◆ IDT70T651/9 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device

◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

◆ On-chip port arbitration logic

◆ Full on-chip hardware support of semaphore signaling between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus matching compatibility

◆ Sleep Mode Inputs on both ports

◆ Supports JTAG features compliant to IEEE 1149.1

◆ Single 2.5V (±100mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port

◆ Available in a 256-ball Ball Grid Array, 208-pin Plastic Quad Flatpack and 208-ball fine pitch Ball Grid Array.

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

产品属性

  • 型号:

    IDT70T659S8BC

  • 功能描述:

    IC SRAM 4MBIT 8NS 256BGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    3,000

  • 系列:

    - 格式 -

  • 存储器:

    EEPROMs - 串行

  • 存储器类型:

    EEPROM

  • 存储容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 线串口

  • 电源电压:

    1.7 V ~ 5.5 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    8-SOIC(0.154,3.90mm 宽)

  • 供应商设备封装:

    8-SOIC

  • 包装:

    带卷(TR)

供应商 型号 品牌 批号 封装 库存 备注 价格
IDT
23+
100TQFP(PN10
9526
询价
IDT
23+
256BGA
2321
原装现货
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IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
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