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IDT70T659S8BC规格书详情
Description
The IDT70T651/9 is a high-speed 256/128K x 36 Asynchronous Dual-Port Static RAM. The IDT70T651/9 is designed to be used as a stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.
Features
◆ True Dual-Port memory cells which allow simultaneous access of the same memory location
◆ High-speed access
– Commercial: 8/10/12/15ns (max.)
– Industrial: 10/12ns (max.)
◆ RapidWrite Mode simplifies high-speed consecutive write cycles
◆ Dual chip enables allow for depth expansion without external logic
◆ IDT70T651/9 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device
◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave
◆ Busy and Interrupt Flags
◆ On-chip port arbitration logic
◆ Full on-chip hardware support of semaphore signaling between ports
◆ Fully asynchronous operation from either port
◆ Separate byte controls for multiplexed bus and bus matching compatibility
◆ Sleep Mode Inputs on both ports
◆ Supports JTAG features compliant to IEEE 1149.1
◆ Single 2.5V (±100mV) power supply for core
◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port
◆ Available in a 256-ball Ball Grid Array, 208-pin Plastic Quad Flatpack and 208-ball fine pitch Ball Grid Array.
◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds
产品属性
- 型号:
IDT70T659S8BC
- 功能描述:
IC SRAM 4MBIT 8NS 256BGA
- RoHS:
否
- 类别:
集成电路(IC) >> 存储器
- 系列:
-
- 标准包装:
3,000
- 系列:
- 格式 -
- 存储器:
EEPROMs - 串行
- 存储器类型:
EEPROM
- 存储容量:
8K(1K x 8)
- 速度:
400kHz
- 接口:
I²C,2 线串口
- 电源电压:
1.7 V ~ 5.5 V
- 工作温度:
-40°C ~ 85°C
- 封装/外壳:
8-SOIC(0.154,3.90mm 宽)
- 供应商设备封装:
8-SOIC
- 包装:
带卷(TR)