首页 >IDT70T651S12BFI>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IDT70T651S12BFI | HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | |
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
详细参数
- 型号:
IDT70T651S12BFI
- 功能描述:
IC SRAM 9MBIT 12NS 208FBGA
- RoHS:
否
- 类别:
集成电路(IC) >> 存储器
- 系列:
-
- 标准包装:
3,000
- 系列:
- 格式 -
- 存储器:
EEPROMs - 串行
- 存储器类型:
EEPROM
- 存储容量:
8K(1K x 8)
- 速度:
400kHz
- 接口:
I²C,2 线串口
- 电源电压:
1.7 V ~ 5.5 V
- 工作温度:
-40°C ~ 85°C
- 封装/外壳:
8-SOIC(0.154,3.90mm 宽)
- 供应商设备封装:
8-SOIC
- 包装:
带卷(TR)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
208-CABGA(15x15) |
209250 |
专业分销产品!原装正品!价格优势! |
询价 | ||
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IDT |
22+ |
208CABGA (15x15) |
9000 |
原厂渠道,现货配单 |
询价 | ||
IDT |
21+ |
208CABGA (15x15) |
13880 |
公司只售原装,支持实单 |
询价 | ||
IDT |
23+ |
208CABGA (15x15) |
9000 |
原装正品,支持实单 |
询价 | ||
IDT |
18 |
QFP |
200 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
IDT |
23+ |
QFP |
66800 |
原装正品专营军工 |
询价 | ||
IDT |
23+ |
208QFP |
2359 |
原装现货 |
询价 | ||
INTEL |
cdip |
3647 |
莱克讯每片来自原厂!价格超越代理!只做进口原装! |
询价 | |||
IDT |
21+ |
QFP |
645 |
航宇科工半导体-央企合格优秀供方! |
询价 |
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