CMOS STATIC RAM 16K (16K x 1-BIT)

DESCRIPTION: The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circ

文件：63.42 Kbytes 页数：8 Pages

IDT

CMOS STATIC RAM 16K (16K x 1-BIT)

DESCRIPTION: The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circ

文件：63.42 Kbytes 页数：8 Pages

IDT

CMOS STATIC RAM 16K (16K x 1-BIT)

DESCRIPTION: The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circ

文件：63.42 Kbytes 页数：8 Pages

IDT

CMOS STATIC RAM 16K (16K x 1-BIT)

DESCRIPTION: The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circ

文件：63.42 Kbytes 页数：8 Pages

IDT

CMOS STATIC RAM 16K (16K x 1-BIT)

DESCRIPTION: The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circ

文件：63.42 Kbytes 页数：8 Pages

IDT