IDT6116LA15数据手册Renesas中文资料规格书

描述 Description

DESCRIPTION:
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-perfor mance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CSgoes HIGH, the circuit will automatically go to, and remain in, a standby power mode, as long as CSremains HIGH. This capability provides significant system level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only
1µW to 4µW operating off a 2V battery. All inputs and outputs of the IDT6116SA/LA are TTL
compatible. Fully static asynchronous circuitry is used, requir ing no clocks or refreshing for operation. The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or ceramic DIP and a 24-lead gull-wing SOIC, and a 24 -lead J-bend SOJ providing high board-level packing densi ties.
Military grade product is manufactured in compliance to the latest version of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.FEATURES:
• High-speed access and chip select times
   — Military: 20/25/35/45/55/70/90/120/150ns (max.)
   — Commercial: 15/20/25/35/45ns (max.)
• Low-power consumption
• Battery backup operation
   — 2V data retention voltage (LA version only)
• Produced with advanced CMOS high-performance technology
• CMOS process virtually eliminates alpha particle soft-error rates
• Input and output directly TTL-compatible
• Static operation: no clocks or refresh required
• Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip and 24-pin SOIC and 24-pin SOJ
• Military product compliant to MIL-STD-833, Class B