27.5 – 31 GHz 9W GaN PA MMIC

Key Features • Frequency range: 27.5 – 31 GHz • Pout: 39.5 dBm (Pin = 24 dBm) • PAE: 22 (Pin = 24 dBm) • Small Signal Gain: 22 dB (28 GHz) • Return Loss: 15 dB • Drain Bias 24V, IDQ = 112 mA – 224 mA • Technology: GaN on SiC • Lead-free and RoHS compliant • Dimensions: 3.025 mm × 3.405 mm

文件：787.2 Kbytes 页数：21 Pages

MICROCHIP

微芯科技

Ka Band Power Amplifier

The ICP2840-1-110I is a Ka Band MMIC power amplifier fabricated using 0.15µm GaN SiC technology. It achieves 39 dBm saturated output power from 27.5-31GHz, with 22% PAE and 22dB small signal gain. The balanced topology provides excellent broadband input and output match to 50 Ohms, and DC blocki Frequency range: 27.5-31GHz\nPout: 39.5 dBm (PIN = 24dBm)\nPAE: 22% (PIN = 24dBm)\nSmall Signal Gain: 22dB (28GHz)\nDrain Bias 24V, IDQ=112-224mA;

Microchip

微芯科技

27.5 – 31 GHz 9W GaN PA MMIC

Key Features • Frequency range: 27.5 – 31 GHz • Pout: 39.5 dBm (Pin = 24 dBm) • PAE: 22 (Pin = 24 dBm) • Small Signal Gain: 22 dB (28 GHz) • Return Loss: 15 dB • Drain Bias 24V, IDQ = 112 mA – 224 mA • Technology: GaN on SiC • Lead-free and RoHS compliant • Dimensions: 3.025 mm × 3.405 mm

文件：787.2 Kbytes 页数：21 Pages

MICROCHIP

微芯科技

27.5 – 31 GHz 9W GaN PA MMIC

Key Features • Frequency range: 27.5 – 31 GHz • Pout: 39.5 dBm (Pin = 24 dBm) • PAE: 22 (Pin = 24 dBm) • Small Signal Gain: 22 dB (28 GHz) • Return Loss: 15 dB • Drain Bias 24V, IDQ = 112 mA – 224 mA • Technology: GaN on SiC • Lead-free and RoHS compliant • Dimensions: 3.025 mm × 3.405 mm

文件：787.2 Kbytes 页数：21 Pages

MICROCHIP

微芯科技