| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V1.8 Qg(Max.)(nC)20 Qgs(nC)3.3 Qgd(nC)11 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET 2.5A,400V,1.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET®TRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-state | IRF International Rectifier | IRF | ||
3.1A,400V,1.800Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=3.1A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surfacemount(IRFR320) •Str | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADAM-TECH |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
ADAMTECH |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
2016+ |
SMD |
8800 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
VISHAY |
2020+ |
SMD |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
伟源盛 |
1950+ |
98552 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
VISHAY/威世 |
24+ |
SMD |
8800 |
全新原装数量均有多电话咨询 |
询价 | ||
VISHAY |
20+ |
电感器 |
682000 |
电感原装优势主营型号-可开原型号增税票 |
询价 | ||
Vishay(威世) |
2021/2022+ |
标准封装 |
6500 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
伟源盛 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
Vishay(威世) |
22+ |
NA |
6500 |
原厂原装现货 |
询价 |
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