512K x 8 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV5128L and IC62VV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：166.83 Kbytes 页数：11 Pages

ICSI

512K x 8 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV5128L and IC62VV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：166.83 Kbytes 页数：11 Pages

ICSI

512K x 8 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV5128L and IC62VV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：166.83 Kbytes 页数：11 Pages

ICSI

512K x 8 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV5128L and IC62VV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：166.83 Kbytes 页数：11 Pages

ICSI

512K x 8 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV5128L and IC62VV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：166.83 Kbytes 页数：11 Pages

ICSI