256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV25616L and IC62VV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performa

文件：321.56 Kbytes 页数：11 Pages

ICSI

256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV25616L and IC62VV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performa

文件：321.56 Kbytes 页数：11 Pages

ICSI

256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV25616L and IC62VV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performa

文件：321.56 Kbytes 页数：11 Pages

ICSI

256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62VV25616L and IC62VV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performa

文件：321.56 Kbytes 页数：11 Pages

ICSI