512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

DESCRIPTION The ICSI IC62LV5128L and IC62LV5128LL is a low voltage, 524,288 words by 8 bits, CMOS SRAM. It is fabricated using ICSIs low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers

文件：179.7 Kbytes 页数：11 Pages

ICSI