首页>IC61S51218T-166TQ>规格书详情
IC61S51218T-166TQ中文资料ICSI数据手册PDF规格书
相关芯片规格书
更多- IC61S51218D-133TQ
- IC61S25636T-166TQ
- IC61S25636T-133TQ
- IC61S25636T
- IC61S51218D
- IC61S51218D-166TQI
- IC61S51218D-250TQ
- IC61S25636T-250TQI
- IC61S25636T-133TQI
- IC61S51218D-133B
- IC61S25636T-250TQ
- IC61S25636T-200TQI
- IC61S25636T-200TQ
- IC61S25636T-166TQI
- IC61S51218D-250TQI
- IC61S51218D-200TQI
- IC61S51218T-133TQ
- IC61S51218D-250B
IC61S51218T-166TQ规格书详情
DESCRIPTION
ICSIs 8Mb SyncBurst Pipelined SRAMs integrate a 512k x 18, 256k x 32, or 256k x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter.
FEATURES
• Pipeline Mode operation
• Single/Dual Cycl Deselect
• User-selectable Output Drive Strength with XQ Mode
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Pentium™ or linear burst sequence control using MODE input
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and 119-pin PBGA package
• Single +3.3V, +10, –5 core power supply
• Power-down snooze mode
• 2.5V or 3.3V I/O Supply
• Snooze MODE for reduced-power standby
• T version (three chip selects)
• D version (two chip selects)