64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：95.44 Kbytes 页数：9 Pages

ICSI

64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：95.44 Kbytes 页数：9 Pages

ICSI

64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：95.44 Kbytes 页数：9 Pages

ICSI

64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：95.44 Kbytes 页数：9 Pages

ICSI

64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：95.44 Kbytes 页数：9 Pages

ICSI

64K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with l

文件：95.44 Kbytes 页数：9 Pages

ICSI

10ns; 3.3V; 64K x 16 high-speed CMOS static RAM

ISSI

矽成半导体