IC61LV2568中文资料256K x 8 Hight Speed SRAM with 3.3V数据手册ISSI规格书

描述 Description

DESCRIPTION
The ICSI IC61LV2568 is a very high-speed, low power, 262,144-word by 8-bit COMS static RAM. The IC61LV2568 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low power consumotion devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36 mW (max.) with CMOS input levels.
The IC61LV2568 operates from a single 3.3V power supply and all inputs are TTL-compatible.
The IC61LV2568 is available in 36-pin, 400mil SOJ and 44-pin TSOP-2 package.FEATURES
• High-speed access times:
   — 8, 10, 12 and 15 ns
• High-preformance, lower-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• CMOS power: 540 mW @ 10 ns 36 mW standby mode
• TTL compatible inputs and outputs
• Single 3.3V ± 10% power supply
• Packages available:
   — 36-pin 400mil SOJ
   — 44-pin TSOP-2

特性 Features

• High-speed access times:
   — 8, 10, 12 and 15 ns
• High-preformance, lower-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• CMOS power: 540 mW @ 10 ns 36 mW standby mode
• TTL compatible inputs and outputs
• Single 3.3V ± 10% power supply
• Packages available:
   — 36-pin 400mil SOJ
   — 44-pin TSOP-2