128K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件：150.41 Kbytes 页数：13 Pages

ICSI

128K x 16 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件：150.41 Kbytes 页数：13 Pages

ICSI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件：88.69 Kbytes 页数：11 Pages

ISSI

矽成半导体

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns wi

文件：146.94 Kbytes 页数：11 Pages

ICSI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with

文件：59.28 Kbytes 页数：12 Pages

ISSI

矽成半导体