64K X 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with l

文件：135.15 Kbytes 页数：10 Pages

ICSI

64K X 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ICSI IC61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with l

文件：135.15 Kbytes 页数：10 Pages

ICSI

64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体