512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST