IC41C16100S中文资料1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE数据手册ISSI规格书

描述 Description

DESCRIPTION
The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IC41C16100S ideal for use in 16-, 32-bit wide data bus systems.FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
  Refresh Mode: 1,024 cycles /16 ms
  RAS-Only, CAS-before-RAS(CBR), and Hidden
  Self refresh Mode- 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
  5V ± 10% (IC41C16100S)
  3.3V ± 10% (IC41LV16100S)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40°C to 85°C

特性 Features

• Extended Data-Out (EDO) Page Mode access cycle
• Refresh Interval:
• JEDEC standard pinout
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40°C to 85°C