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型号	下载订购	功能描述	制造商上传企业	LOGO
IC41C16100S-50KG	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-50KI	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-50KIG	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-50T	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-50TG	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-50TI	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-50TIG	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-60K	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-60KG	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI
IC41C16100S-60KI	文件：672.77 Kbytes Page：21 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 文件：672.77 Kbytes 页数：21 Pages	ICSI	ICSI

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详细参数

型号：
IC41
制造商：
ICSI
制造商全称：
Integrated Circuit Solution Inc
功能描述：
256Kx16 bit Dynamic RAM with EDO Page Mode

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	IC41C16256-50T	ICSI	23+	TSOP	4000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市英卓尔科技有限公司	IC41C16256-60T	ISSI	20+	TSOP	2960	诚信交易大量库存现货	询价
深圳市赛尔通科技有限公司	IC41C1625735K	ICS	23+		65480		询价
深圳市一线半导体有限公司	IC41C16257-35K	ICSI	24+	SOJ	13491		询价
深圳市福田区绿盛电子商行	IC41C16257-35K	ICSI	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市卓越微芯电子有限公司	IC41C16257-35K	ICSI	25+	SOJ40	163	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市凌旭科技有限公司	IC41C16257-35K	ICSI	2016+	SOJ40	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海鑫科润电子科技有限公司	IC41C16257-35K	ICSI	01/02+	SOJ-40	650	原装现货海量库存欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	IC41C16257-35K	ICS	25+	SOJ	2987	绝对全新原装现货供应!	询价
深圳市华来深电子有限公司	IC41C16257-35K	ICSI	23+	SOJ-40	8650	受权代理!全新原装现货特价热卖!	询价

更多IC41供应商更新时间2026-3-11 14:24:00

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