IAUCN08S7N034

丝印：7N08N034；Package：PG-TDSON-8-34；Automotive MOSFET OptiMOSTM 7 Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avala

IAUCN08S7N034

Automotive MOSFET; • Low on-resistance, RDS(on)\n• Leading edge FOM (RDS (on)x Qg)\n• Fast switching times (turn on/off)\n• Low package resistance and inductance\n• High avalanche current capability\n• High SOA ruggedness\n• Excellent thermal performance\n• Extended qualification beyond AEC-Q101\n• Enhanced electrical testing\n• MSL1 up to 260°C peak reflow\n• 175°C operating temperature\n\n优势:\n• Very low conduction losses\n• Superior switching performance\n• Highest power density in 5x6mm package\n• High power efficiency\n• Small footprint & efficient cooling\n• Increased design ruggedness\n• Designed for Automotive robustness\n• High quality production for Automotive;

Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V.  This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package.  It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. \n