isc N-Channel MOSFET Transistor

FEATURE S ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

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ISC

无锡固电

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

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Intersil

Data Acquisition

Data Acquisition

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Data Acquisition

Data Acquisition

文件：6.38071 Mbytes 页数：180 Pages

Intersil