HZM8.2NB2JTR-E技术资料参数供应代理飞利浦-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HZM8.2NB2	文件：193.81 Kbytes Page：8 Pages	SiliconEpitaxialPlanarZenerDiodeforStabilizer	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HZM8.2NB2	文件：193.81 Kbytes Page：8 Pages	SiliconEpitaxialPlanarZenerDiodeforStabilizer Features •Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. •MPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
HZS8.2NB2	文件：57.36 Kbytes Page：7 Pages	SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
PZM8.2NB2	文件：75.34 Kbytes Page：12 Pages	Voltageregulatordiodes DESCRIPTION LowpowergeneralpurposevoltageregulatordiodeinaSOT346(SC59)plasticpackage,suitableforsurface mounteddesign. FEATURES •Totalpowerdissipation:max.300mW •Smallplasticpackagesuitableforsurfacemounteddesign •Wideworkingvoltagerange:nom.	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips
PZM8.2NB2A	文件：59.42 Kbytes Page：12 Pages	Voltageregulatordoublediodes	PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦	Philips

更多HZM8.2NB2JTR-E供应商更新时间2024-9-24 17:38:00