首页 >HZ5B2(4.7V-4.9V)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SuperFastRecoveryDiode | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
SiliconPlanarZenerDiodeforStabilizedPowerSupply Features •Lowleakage,lowzenerimpedanceandmaximumpowerdissipationof500mW. •Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. •LLDPackageissuitableforhighdensitysurfacemountingandhighspeedassembly. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC |
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