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HYS72V16300GU-8-C2中文资料英飞凌数据手册PDF规格书
厂商型号 |
HYS72V16300GU-8-C2 |
功能描述 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
文件大小 |
322.44 Kbytes |
页面数量 |
20 页 |
生产厂商 | Infineon Technologies AG |
企业简称 |
Infineon【英飞凌】 |
中文名称 | 英飞凌科技股份公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-9-24 15:00:00 |
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HYS72V16300GU-8-C2规格书详情
Description
The HYS 64(72)V16300GU and HYS 64(72)V32220GU are industry-standard 168-pin 8-byte Dual In-line Memory Modules (DIMMs) which are organized as 16M × 64, 16M × 72 in 1 bank and 32M × 64 and 32M × 72 in two banks of high-speed memory arrays designed with 128Mbit Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -7 speed sorted 16M × 8 SDRAM devices in TSOP54 packages to meet the PC133-222 requirements, -7.5 speed sorted for PC133-333 and use -8 components for the standard PC100-222 applications.
• 168-Pin unbuffered 8-Byte Dual-In-Line SDRAM Modules for PC main memory applications
• PC100-222, PC133-333 and PC133-222 versions
• 1 bank 16M × 64, 16M × 72 and 2 bank 32M × 64, 32M × 72 organzation
• Optimized for byte-write non-parity (x64) or ECC (x72) applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 Module Specification
• SDRAM Performance:
• Programmed Latencies:
• Single +3.3 V(±0.3 V) Power Supply
• Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential and Interleave)
• Auto-Refresh (CBR) and Self-Refresh
• Decoupling capacitors mounted on substrate
• All inputs and outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 16M × 8 SDRAMs in TSOPII-54 packages with 4096 refresh cycles every 64 ms
• 133.35 mm × 31.75 mm × 4,00 mm card size with gold-contact pads (JEDEC MO-161-BA)
产品属性
- 型号:
HYS72V16300GU-8-C2
- 制造商:
INFINEON
- 制造商全称:
Infineon Technologies AG
- 功能描述:
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules