256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

The HYB 514256B/BJ/BL/BJL is the new generation dynamic RAM organized as 262 144 words by 4-bit. The HYB 514256B/BJ/BL/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed ad

文件：215.36 Kbytes 页数：22 Pages

SIEMENS

西门子

256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

The HYB 514256B/BJ/BL/BJL is the new generation dynamic RAM organized as 262 144 words by 4-bit. The HYB 514256B/BJ/BL/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed ad

文件：215.36 Kbytes 页数：22 Pages

SIEMENS

西门子

256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

The HYB 514256B/BJ/BL/BJL is the new generation dynamic RAM organized as 262 144 words by 4-bit. The HYB 514256B/BJ/BL/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed ad

文件：215.36 Kbytes 页数：22 Pages

SIEMENS

西门子

256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM

The HYB 514256B/BJ/BL/BJL is the new generation dynamic RAM organized as 262 144 words by 4-bit. The HYB 514256B/BJ/BL/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed addr

Infineon

英飞凌

256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

Infineon

英飞凌

256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

Infineon

英飞凌