HY62CT08081E-E中文资料海力士数据手册PDF规格书

DESCRIPTION

The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.

FEATURES

• Fully static operation and Tri-state output

• TTL compatible inputs and outputs

• Low power consumption

• Battery backup

- 2.0V(min.) data retention

• Standard pin configuration

- 28 pin 600mil PDIP

- 28 pin 330mil SOP

- 28 pin 8x13.4 mm TSOP-I (Standard)