HY5DU281622FTP中文资料海力士数据手册PDF规格书

DESCRIPTION

The HY5DU281622FT(P) is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the

main memory applications which requires large memory density and high bandwidth.

This Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the

clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,

Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible

with SSTL_2.

FEATURES

• VDD, VDDQ = 2.3V min ~ 2.7V max

(Typical 2.5V Operation +/- 0.2V for DDR266, 333)

• VDD, VDDQ = 2.4V min ~ 2.7V max

(Typical 2.6V Operation +0.1/- 0.2V for DDR400

and 400Mbps/pin product)

• All inputs and outputs are compatible with SSTL_2

interface

• Fully differential clock inputs (CK, /CK) operation

• Double data rate interface

• Source synchronous - data transaction aligned to

bidirectional data strobe (DQS)

• x16 device has two bytewide data strobes (UDQS,

LDQS) per each x8 I/O

• Data outputs on DQS edges when read (edged DQ)

Data inputs on DQS centers when write (centered

DQ)

• On chip DLL align DQ and DQS transition with CK

transition

• DM mask write data-in at the both rising and falling

edges of the data strobe

• All addresses and control inputs except data, data

strobes and data masks latched on the rising edges

of the clock

• Programmable CAS latency 2/2.5 (DDR266, 333)

and 3 (DDR400 and 400Mbps/pin product) supported

• Programmable burst length 2/4/8 with both sequential and interleave mode

• Internal four bank operations with single pulsed

/RAS

• Auto refresh and self refresh supported

• tRAS lock out function supported

• 4096 refresh cycles/64ms

• JEDEC standard 400mil 66pin TSOP-II with 0.65mm

pin pitch

• Lead free (*ROHS Compliant)