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HY57V651620BLTC-10

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic

文件:81.92 Kbytes 页数:12 Pages

Hynix

海力士

HY57V651620BLTC-10P

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic

文件:81.92 Kbytes 页数:12 Pages

Hynix

海力士

HY57V651620BLTC-10S

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic

文件:81.92 Kbytes 页数:12 Pages

Hynix

海力士

HY57V651620BLTC-55

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic

文件:81.92 Kbytes 页数:12 Pages

Hynix

海力士

HY57V651620BLTC-6

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic

文件:81.92 Kbytes 页数:12 Pages

Hynix

海力士

HY57V651620BLTC-7

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic

文件:81.92 Kbytes 页数:12 Pages

Hynix

海力士

HY57V651620BLTC-75

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic

文件:81.92 Kbytes 页数:12 Pages

Hynix

海力士

HY57V651620BLTC-8

4 Banks x 1M x 16Bit Synchronous DRAM

DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16. FEATURES • Single 3.3±0.3V power supplyNote) • All devic

文件:81.92 Kbytes 页数:12 Pages

Hynix

海力士

HY57V651620BLTC-10

4 Banks x 1M x 16Bit Synchronous DRAM

SK hynix

海力士

详细参数

  • 型号:

    HY57V651620BLT

  • 制造商:

    HYNIX

  • 制造商全称:

    Hynix Semiconductor

  • 功能描述:

    4 Banks x 1M x 16Bit Synchronous DRAM

供应商型号品牌批号封装库存备注价格
24+
QFP
10
询价
SHARP
23+
TQFP
6500
全新原装假一赔十
询价
HYUNDAI
25+
TSSOP
3000
强调现货,随时查询!
询价
HYUNDAI
24+
TSOP
5000
只做原装公司现货
询价
HYUNDAI
21+
TSOP
10000
原装现货假一罚十
询价
HYUNDAI
25+
42
公司优势库存 热卖中!
询价
HY
23+
TSOP-54
3940
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
HYNIX
2023+
QFP
50000
原装现货
询价
HYUNDAI
99
TSSOP
389
原装现货
询价
HYNIX
24+
TSSOP
3000
原装现货假一罚十
询价
更多HY57V651620BLT供应商 更新时间2025-11-23 10:50:00