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HY57V561620CLTP-6

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件:217.72 Kbytes 页数:12 Pages

Hynix

海力士

HY57V561620CLTP-7

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件:217.72 Kbytes 页数:12 Pages

Hynix

海力士

HY57V561620CLTP-8

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件:217.72 Kbytes 页数:12 Pages

Hynix

海力士

HY57V561620CLTP-H

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件:217.72 Kbytes 页数:12 Pages

Hynix

海力士

HY57V561620CLTP-K

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件:217.72 Kbytes 页数:12 Pages

Hynix

海力士

HY57V561620CLTP-P

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件:217.72 Kbytes 页数:12 Pages

Hynix

海力士

HY57V561620CLTP-S

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

文件:217.72 Kbytes 页数:12 Pages

Hynix

海力士

详细参数

  • 型号:

    HY57V561620CLTP

  • 制造商:

    HYNIX

  • 制造商全称:

    Hynix Semiconductor

  • 功能描述:

    4 Banks x 4M x 16Bit Synchronous DRAM

供应商型号品牌批号封装库存备注价格
HYNIX
SOP
1090
优势库存
询价
HY
24+
SMD
20000
一级代理原装现货假一罚十
询价
HY
24+
TSSOP54
100
大批量供应优势库存热卖
询价
HY
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
HYNIX
24+
TSOP-54
4000
原装现货假一罚十
询价
HY
23+
TSOP54
50000
全新原装正品现货,支持订货
询价
hynix
23+
TSOP
50000
全新原装正品现货,支持订货
询价
HY
21+
TSOP54
10000
原装现货假一罚十
询价
HYNIX/海力士
23+
TSOP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HY
14+
TSOP54
28
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多HY57V561620CLTP供应商 更新时间2025-11-18 13:52:00