首页 >HY57V561620CLTP>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件:217.72 Kbytes 页数:12 Pages | Hynix 海力士 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件:217.72 Kbytes 页数:12 Pages | Hynix 海力士 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件:217.72 Kbytes 页数:12 Pages | Hynix 海力士 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件:217.72 Kbytes 页数:12 Pages | Hynix 海力士 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件:217.72 Kbytes 页数:12 Pages | Hynix 海力士 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件:217.72 Kbytes 页数:12 Pages | Hynix 海力士 | Hynix | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件:217.72 Kbytes 页数:12 Pages | Hynix 海力士 | Hynix |
详细参数
- 型号:
HY57V561620CLTP
- 制造商:
HYNIX
- 制造商全称:
Hynix Semiconductor
- 功能描述:
4 Banks x 4M x 16Bit Synchronous DRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
SOP |
1090 |
优势库存 |
询价 | |||
HY |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
HY |
24+ |
TSSOP54 |
100 |
大批量供应优势库存热卖 |
询价 | ||
HY |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
HYNIX |
24+ |
TSOP-54 |
4000 |
原装现货假一罚十 |
询价 | ||
HY |
23+ |
TSOP54 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
hynix |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HY |
21+ |
TSOP54 |
10000 |
原装现货假一罚十 |
询价 | ||
HYNIX/海力士 |
23+ |
TSOP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
HY |
14+ |
TSOP54 |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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