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型号	下载订购	功能描述	制造商上传企业	LOGO
HY57V561620C	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLT-6	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLT-7	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLT-8	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLT-H	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLT-K	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLT-P	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLTP-6	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLTP-7	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix
HY57V561620CLTP-8	文件：217.72 Kbytes Page：12 Pages	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a 文件：217.72 Kbytes 页数：12 Pages	Hynix 海力士	Hynix

详细参数

型号：
HY57V561620C
制造商：
HYNIX
制造商全称：
Hynix Semiconductor
功能描述：
4 Banks x 4M x 16Bit Synchronous DRAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	HY57V561620C	HUNIX	18+	SSOP	85600	保证进口原装可开17%增值税发票	询价
深圳市毅创腾电子科技有限公司	HY57V561620CT-H	HY	23+	TSSOP	7000	绝对全新原装!现货!特价!请放心订购!	询价
深圳市凌旭科技有限公司	HY57V561620CTP-H	HYNIX	2016+	TSOP54	960	只做原装,假一罚十,公司优势内存型号!	询价
深圳市福安瓯科技有限公司	HY57V561620CT-H	HYNIX	25+	TSSOP	2500		询价
深圳市福田区绿盛电子商行	HY57V561620CT-H	HYNIX	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市星佑电子有限公司	HY57V561620CT-H	HY	06+	TSOP	1000	自己公司全新库存绝对有货	询价
深圳市勤思达科技有限公司	HY57V561620CT-H	HYNIX	15+	TSSOP	11560	全新原装,现货库存,长期供应	询价
深圳市恒创达实业有限公司	HY57V561620CTP-H	HYNIX	17+	TSOP	6200	100%原装正品现货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	HY57V561620CTP-H	HYNIX	25+	LQFP80	18000	原厂直接发货进口原装	询价
齐创科技(上海,北京,青岛)有限公司	HY57V561620CTP-H	HYNIX	23+	TSOP54	5000	原装正品,假一罚十	询价

更多HY57V561620C供应商更新时间2025-12-13 15:14:00

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