N-Channel Enhancement Mode MOSFET

Features 125V/300A RDS(ON) 2.9 m2 (typ.) @VGs 10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

文件：493.12 Kbytes 页数：11 Pages

HOOYI

后羿半导体

N-Channel Enhancement Mode MOSFET

Features 125V/300A RDS(ON) 2.9 m2 (typ.) @VGs 10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)

文件：493.12 Kbytes 页数：11 Pages

HOOYI

后羿半导体

Virtual Ground Analog Switch

Description The IH5009 series of analog switches were designed to fill the need for an easy-to-use, inexpensive switch for both industrial and military applications. Although low cost is a primary design objective, performance and versatility have not been sacrificed. Each package contains u

文件：26.49 Kbytes 页数：3 Pages

INTERSIL

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

文件：4.13074 Mbytes 页数：122 Pages

INTERSIL