HY27UF081G2M-T数据手册库存现货海力士-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HY27UF081G2M-T	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TCB	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TCP	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TCS	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TEB	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TEP	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TES	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TIB	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TIP	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix
HY27UF081G2M-TIS	文件：476.81 Kbytes Page：48 Pages	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided 文件：476.81 Kbytes 页数：48 Pages	Hynix 海力士	Hynix

详细参数

型号：
HY27UF081G2M-T
制造商：
HYNIX
制造商全称：
Hynix Semiconductor
功能描述：
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	HY27UF081G2M-TPCB	HYNIX	16+	QFP	4000	进口原装现货/价格优势!	询价
深圳市富诚威科技有限公司	HY27UF081G2M-TIB	SAMSUNG	25+	TSOP-48	4650		询价
深圳市弘为电子有限公司	HY27UF081G2M-TPCB	Hynix	24+	TSOP	2500	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	HY27UF081G2M-TPCB	HYNIX	25+	TSOP48	79	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市一线半导体有限公司	HY27UF081G2M-TPCB128GM	HYNIX	24+	SLC	26		询价
上海意淼电子科技有限公司	HY27UF081G2M-TPCB	HYHIX	23+	TSOP48	12000	全新原装假一赔十	询价
深圳市华来深电子有限公司	HY27UF081G2M-TPCB	hynix	23+	TSOP48	8560	受权代理!全新原装现货特价热卖!	询价
深圳市昊创电子有限公司	HY27UF081G2M-TPCB	HYNIX/海力士	1824+	TSOP	4200	原装现货专业代理,可以代拷程序	询价
深圳市赛芯源科技有限公司	HY27UF081G2M-TCB	HYUNDAI	19+	TSOP	32000	原装正品,现货特价	询价
深圳市华睿芯科技有限公司	HY27UF081G2M-TPCB	HYNIX	24+	TSOP48	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价

更多HY27UF081G2M-T供应商更新时间2025-10-11 15:14:00

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