HX2160中文资料霍尼韦尔数据手册PDF规格书

GENERAL DESCRIPTION

The HX2000 and HX2000r gate arrays are performance oriented sea-of-transistor arrays, fabricated on Honeywell’s RICMOS™ IV Silicon On Insulator (SOI) process. The HX2000 arrays are for 5V designs only. The HX2000r arrays support 5V and 3.3V operation. High density is achieved with the standard 3-layer metal or optional 4-layer metal process, providing up to 290,000 usable gates.

FEATURES

• Fabricated on Honeywell’s Radiation Hardened

– 0.65 µmLeff RICMOS™ IV SOI Process, HX2000

– 0.55 µmLeff RICMOS™ IV SOI Process, HX2000r

• Array Sizes from 40K to 390K Available Gates (Raw)

• HX2000 Supports 5V Core Operation

• HX2000r Supports 3.3V Core Operation

• HX2000r Supports Mixed Voltage I/O Buffers

• TTL (5V) or CMOS (5V/3.3V) Compatible I/O

• Configurable Multi-Port Gate Array SRAM

• Single or Dual Port Custom SRAM Drop-In Capability

• Supports Chip Level Power Down for Cold Sparing

• Supports System Speeds Beyond 100 MHz

• Total Dose Hardness ≥1x106 rad(SiO2)

• Dose Rate Upset Hardness:

≥1x1010 rad(Si)/sec, HX2000*

≥1x109 rad(Si)/sec, HX2000r*

Option Available for:

≥1x1011 rad(Si)/sec, HX2000*

≥1x1010 rad(Si)/sec, HX2000r*

• Dose Rate Survivability ≥1x1012 rad(Si)/sec*

• Soft Error Rate

≤1x10-11 Errors/Bit/Day, HX2000

≤1x10-10 Errors/Bit/Day, HX2000r

• Neutron Fluence Hardness to 1x1014/cm2

• No Latchup