MDL,SIN,100D,1:!,SMT

文件：298.92 Kbytes 页数：3 Pages

PULSE

0.8A 300.380 VOLTAGE SCRS IGT

Description The HML1225/HXL1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

文件：28.37 Kbytes 页数：2 Pages

HSMC

华昕

0.8A 300/380 VOLTAGE SCRS IGT

Description The HML1225/HXL1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

文件：764.66 Kbytes 页数：2 Pages

KERSEMI

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 209A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.28mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

文件：341.22 Kbytes 页数：2 Pages

ISC

无锡固电