L-Band GaAs Power FET

Description The HWF1686RA is a medium power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package. Features • Output Power: P1dB=30 dBm (typ.) • High Gain: GL=16 Db (typ.) • High Efficiency: PAE =45 (typ.) • H

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HW

汉威光电

L-Band GaAs Power FET

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HW

汉威光电

L-Band Power FET Via Hole Chip

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HW

汉威光电

DATA SUBJECT TO CHANGE WITHOUT NOTLCE

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HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Armoire autoportante modulaire en acier doux de type 12

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HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司