IRF522

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

IRF522

iscN-ChannelMOSFETTransistor

•DESCRITION •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •FEATURES •LowRDS(on) •VGSRatedat±20V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequire

IRF522

N-ChannelPowerMosfets,

IRF522

SEMICONDUCTORS

IRF522FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

KF522

MOSFIELDEFFECTTRANSISTORSMOSFELDEFFECT-TRANSISTOREN

MOSFIELDEFFECTTRANSISTORS DUALMOSFIELDEFFECTTRANSISTORSWITHCHANNELP JUNCTIONFIELDEFFECTTRANSISTORSWITHCHANNELNFORVERYHIGHSPEEDCIRCUITSANDCHOPPERS

L522

PowerModules

•LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections

L-522

CommonModeInductorForDC/DCPowersupply

L522F

PowerModules

•LowProfile •7DifferentCircuitstoChoosefrom •DesignedforPrintedCircuitBoardConnections

L522MJ

9.0Volts36.4grams(1.3oz.)22.6cubiccentimeters(1.32cubicinch)