定时IC

Haiwei

海宁海微

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

文件：154.63 Kbytes 页数：2 Pages

Microsemi

美高森美

30 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

文件：47.66 Kbytes 页数：3 Pages

Ericsson

爱立信

ADAPTER-18W

文件：75.61 Kbytes 页数：2 Pages

VOLGEN

Volgen America/Kaga Electronics USA