Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n =2.20 min) • Low series resistance. (rs=0.6Ωmax). • Ultra small Resin Package (URP) is suitable for surface mount design.

文件：25.31 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

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Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n = 2.20 min) • Low series resistance. (rs = 0.60 Ω max) • Ultra small Resin Package (URP) is suitable for surface mount design.

文件：144.15 Kbytes 页数：5 Pages

RENESAS

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Diodes>Variable Capacitance

Renesas

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WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

文件：20.21 Kbytes 页数：2 Pages

NTE