Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Features • Low capacitance.(C1=1.0pF max) • Low forward resistance. (rf=0.7Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：23.21 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Features • Low capacitance.(C1 = 1.0pF max) • Low forward resistance. (rf = 0.7Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：81.62 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar Pin Diode

Features ● Low capacitance.(C=1.0pF max) ● Low forward resistance. (rf=0.7 max)

文件：32 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

• Low capacitance.(C1=1.0pF max)\n• Low forward resistance. (rf=0.7Ω max)\n• Ultra small Flat Package (UFP) is suitable for surface mount design.;

HITACHI

日立

Silicon Epitaxial Planar Pin Diode for Antenna Switching

Features • An optimal solution for antenna switching in mobile phones. • Low capacitance.(C1 = 1.0 pF max) • Low forward resistance. (rf = 0.7 Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

文件：159.73 Kbytes 页数：5 Pages

RENESAS

瑞萨