N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：905.08 Kbytes 页数：4 Pages

BYCHIP

百域芯

20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchild

Features • Ultra Low On-Resistance - rDS(ON) = 0.032Ω, VGS = 10V - rDS(ON) = 0.037Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

文件：199.89 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.032Ω, VGS = 10V - rDS(ON) = 0.037Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Widt

文件：127 Kbytes 页数：9 Pages

INTERSIL

20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchild

Features • Ultra Low On-Resistance - rDS(ON) = 0.032Ω, VGS = 10V - rDS(ON) = 0.037Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse

文件：199.89 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体