2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d

文件：175.94 Kbytes 页数：9 Pages

Fairchild

仙童半导体

2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the d

文件：325.25 Kbytes 页数：8 Pages

Intersil

2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the dio • 2.6A, 55V\n• Ultra Low On-Resistance, rDS(ON) = 0.090Ω\n• Diode Exhibits Both High Speed and Soft Recovery\n• Temperature Compensating PSPICE® Model\n• Thermal Impedance SPICE Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n  - TB334, “Guidelines for Soldering;

Renesas

瑞萨

2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the dio • 2.6A, 55V\n• Ultra Low On-Resistance, rDS(ON) = 0.090Ω\n• Diode Exhibits Both High Speed and Soft Recovery\n• Temperature Compensating PSPICE® Model\n• Thermal Impedance SPICE Model\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n  - TB334, “Guidelines for Soldering;

ONSEMI

安森美半导体