ISO 18000 transponder IC

Features Integrated circuit for contactless identification transponders and cards Integrated resonance capacitor of 210 pF with ± 3 tolerance or 280 pF with ± 5 tolerance over full production Frequency range 100 kHz to 150 kHz description The HITAG product line is well known and establi

文件：781.17 Kbytes 页数：44 Pages

恩XP

ISO 18000 transponder IC

Features Integrated circuit for contactless identification transponders and cards Integrated resonance capacitor of 210 pF with ± 3% tolerance or 280 pF with ± 5% tolerance over full production Frequency range 100 kHz to 150 kHz description The HITAG product line is well known a

文件：781.17 Kbytes 页数：44 Pages

恩XP

HITAG® μ (ISO18000-2)应答器IC

在非接触式识别市场上，HITAG产品线广为人知且使用广泛。\n由于恩XP推行开放市场战略，目前有多家制造商同时生产应答器/卡和读/写设备。这些产品均支持HITAG 1、HITAG 2和HITAG S应答器IC。\n随着全新HITAG μ系列的发布，现有基础设施扩展到了新一代IC，大幅缩小机械尺寸、降低成本且具有更远工作距离以及更快速度，但依然可采用相同的读卡器基础设施以及应答器生产设备。\nHITAG μ ISO 18000的协议和命令结构支持读卡器呼叫优先(RTF)操作，集成防干扰算法。\n 功能用于非接触式识别应答器和卡的集成电路\n210 pF集成式谐振电容，整个生产阶段的容差为± 3%；或280 pF集成式谐振电容，整个生产阶段容差为± 5 %\n频率范围：100 kHz至150 kHz\n协议调制读/写器件 → 应答器：100 % ASK和二进制脉冲长度编码\n调制应答器 → 读/写器件：带防干扰、Manchester编码的强ASK调制\n快速防干扰协议\n数据完整性检查(CRC)\n读卡器说话优先(RTF)模式\n读/写器件到应答器的数据速率：5.2 kb/s\n应答器到读/写器件的数据速率：4 kb/s\n存储器1760位\n高达10 000次擦;

恩XP

DirectFET

Power MOSFET

Description The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with e

文件：344.2 Kbytes 页数：10 Pages

IRF

Ultra-low Package Inductance

文件：344.2 Kbytes 页数：10 Pages

IRF

DirectFET

Power MOSFET

Description The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with e

文件：344.2 Kbytes 页数：10 Pages

IRF