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FSL13A0D

9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSL13A0R

9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSS13A0D

2A,100V,0.170Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

Intersil

Intersil Corporation

FSS13A0R

2A,100V,0.170Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

Intersil

Intersil Corporation

FSYE13A0D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYE13A0R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

LWTN-13A0

PowerTransducerSeriesL-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

LWTN-13A0SLASHQ

PowerTransducerSeriesL-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

详细参数

  • 型号:

    HTG13A0

  • 功能描述:

    4-Bit Microcontroller

供应商型号品牌批号封装库存备注价格
晶片
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
HOLTEK
92+
SMD
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FAIRCHILD
05+
原厂原装
4276
只做全新原装真实现货供应
询价
FAI
2023+
TO-263
5800
进口原装,现货热卖
询价
HOLTEK/合泰
24+
65230
询价
HOLTEK/合泰
23+
7300
专注配单,只做原装进口现货
询价
HOLTEK/合泰
23+
7300
专注配单,只做原装进口现货
询价
HOTEK
01+
DIE
4000
普通
询价
HOTEL
23+
QFP
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
HOTEL
2407+
QFP
7750
原装现货!实单直说!特价!
询价
更多HTG13A0供应商 更新时间2025-5-14 17:29:00