HUR6030

High-PerformanceWideTemperatureRangeUltraFastRecoveryEpitaxialDiode

FEATURES *Internationalstandardpackage *Planarpassivatedchips *Veryshortrecoverytime *Extremelylowswitchinglosses *LowIRM-values *Softrecoverybehaviour APPLICATIONS *Antiparalleldiodeforhighfrequencyswitchingdevices *Antisaturationdiode *Snubberdiode *Free

HUR6030

UltraFastRecoveryEpitaxialDiodes

HUR6030PT

High-PerformanceWideTemperatureRangeUltraFastRecoveryEpitaxialDiode

HUR6030PT

SoftRecoveryBehaviourHigh-PerformanceUltraFastRecoveryEpitaxialDiodes

IPT-6030

ICReferenceDesignTransformers

IS6030

OPTICALLYCOUPLEDBILATERALSWITCHNON-ZEROCROSSINGTRIAC

ISU6030

StandardRecoveryRectifierDiodes

DESCRIPTION ·Highpowerdissipation ·VRRMupto1000V APPLICATIONS ·PolarityProtection ·PowerSupplies

KDB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Features ●52A,30V.RDS(ON)=0.0135Ω@VGS=10V RDS(ON)=0.020Ω@VGS=4.5V ●Lowgatecharge(typical34nC). ●LowCrss(typical175pF). ●Fastswitchingspeed.

KDD6030L

30VN-ChannelPowerTrenchMOSFET

Features ●12A,30V.RDS(ON)=14.5mΩ@VGS=10V RDS(ON)=21mΩ@VGS=4.5V ●Lowgatecharge ●Fastswitchingspeed ●HighperformancetrenchtechnologyforextremelylowRDS(ON)

KIA6030

BIPOLARLINEARINTEGRATEDCIRCUIT(FMMPXSYSTEMFORCARETR)

BIPOLARLINEARINTEGRATEDCIRCUIT FMMPXSYSTEMFORCARETR