Silicon Schottky Barrier Diode for Various Detector, Mixer

Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

文件：21.23 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon Schottky Barrier Diode for Detector and Mixer

Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

文件：61.74 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon Schottky Barrier Diode

Features ● Low capacitance. (C=0.8pF max) ● Low forward voltage. ● Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

文件：32.96 Kbytes 页数：1 Pages

KEXIN

科信电子

Diodes>Switching

Renesas

瑞萨