Silicon Schottky Barrier Diode for Various Detector, Mixer

Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

文件：21.23 Kbytes 页数：5 Pages

HITACHIHitachi Semiconductor

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Silicon Schottky Barrier Diode for Detector and Mixer

Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.

文件：61.74 Kbytes 页数：5 Pages

RENESAS

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Silicon Schottky Barrier Diode

Features ● Low capacitance. (C=0.8pF max) ● Low forward voltage. ● Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

文件：32.96 Kbytes 页数：1 Pages

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Diodes>Switching

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