Radiation Hardened Programmable Low Power Op Amps

- Single event latch-up . . . . . . . . . Immune (RSG DI Process) - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si) - Low dose rate (0.01rad(SI)/s) . . . . . . . . . . . . . . 50krad(Si) • Wide range AC programming - Slew rate . . . . . . . . . . . . . . . . . . . . . . . . .

文件：339.35 Kbytes 页数：7 Pages

RENESAS

瑞萨

Fuji Power MOSFET SuperFAP-G series Target Specification

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：31.96 Kbytes 页数：1 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

文件：119.95 Kbytes 页数：4 Pages

FUJI

富士通

TH Earphone Jacks (∅2.5mm)

文件：242.28 Kbytes 页数：4 Pages

YAMAICHI