Surface Mount High Performance AlInGaP LED Indicators

Description The LED material used in these devices is the very efficient absorbing Substrate aluminum indium gallium phosphide (AS AlInGaP), capable of producing high light output over a wide range of drive currents. Features • Outstanding LED Material Efficiency • Exceptional Light Output Ove

文件：155.71 Kbytes 页数：5 Pages

HP

安捷伦

Surface Mount High Performance AlInGaP LED Indicators

Description The LED material used in these devices is the very efficient absorbing Substrate aluminum indium gallium phosphide (AS AlInGaP), capable of producing high light output over a wide range of drive currents. Features • Outstanding LED Material Efficiency • Exceptional Light Output Ove

文件：155.71 Kbytes 页数：5 Pages

HP

安捷伦

Dual N-Channel Silicon Junction Field-Effect Transistor

• Very High Impedance Differential Amplifiers • Electrometers

文件：67.04 Kbytes 页数：1 Pages

INTERFET

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : V(BR)CEO= 200V(Min) ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high fidelity audio amplifier and other linear applications

文件：295.07 Kbytes 页数：2 Pages

ISC

无锡固电