HSD1609S中文资料华昕数据手册PDF规格书

厂商型号	HSD1609S
功能描述	NPN EPITAXIAL PLANAR TRANSISTOR
文件大小	39.64 Kbytes
页面数量	4 页
生产厂商	HSMC
中文名称	华昕
网址	网址
数据手册	下载地址一下载地址二
更新时间	2025-12-14 20:00:00
人工找货	HSD1609S价格和库存，欢迎联系客服免费人工找货

描述 Description

The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature...................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................ 900 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 160 V

VCEO Collector to Emitter Voltage.................................................................................... 160 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current........................................................................................................ 100 mA